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NSL35TT1 Datasheet, PDF (2/7 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Mount PNP Silicon Transistor
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NSL35TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −35 Vdc, IE = 0)
Collector−Emitter Cutoff Current
(VCES = −30 Vdc)
ICBO
ICES
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −100 mA, VCE = −1.0 V)
(IC = −100 mA, VCE = −2.0 V)
(IC = −250 mA, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = −50 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −1.0 mA)
(IC = −250 mA, IB = −2.5 mA)
(IC = −250 mA, IB = −5.0 mA)
(IC = −500 mA, IB = −50 mA)
Base −Emitter Saturation Voltage (Note 3)
(IC = −150 mA, IB = −20 mA)
hFE
VCE(sat)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −150 mA, VCE = −3.0 V)
Input Capacitance
(VEB = 0 V, f = 1.0 MHz)
VBE(on)
Cibo
Output Capacitance
(VCB = 0 V, f = 1.0 MHz)
Cobo
Turn−On Time
ton
(IBI = −50 mA, IC = −500 mA, RL = 3.0 Ω)
Turn−Off Time
toff
(IB1 = IB2 = −50 mA, IC = −500 mA, RL = 3.0 Ω)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
Min
−35
−50
−5.0
−
−
−
100
100
100
−
−
−
−
−
−
−
−
−
−
−
Typical
Max
Unit
−45
−65
−7.0
−0.03
−0.03
−0.01
Vdc
−
Vdc
−
Vdc
−
mAdc
−0.1
mAdc
−0.1
mAdc
−0.1
180
−
180
−
150
−
V
−0.090 −0.130
−0.200 −0.350
−0.320 −0.450
−0.170
−
−0.270 −0.350
V
−0.81
−0.9
V
−0.81
−0.875
pF
45
−
pF
18
−
ns
40
−
ns
70
−
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