NSL35TT1 Datasheet, PDF (1/7 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Mount PNP Silicon Transistor

NSL35TT1
High Current Surface
Mount PNP Silicon
Low V_CE(sat) Transistor
for Battery Operated
Applications
MAXIMUM RATINGS (T_A = 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Peak
Collector Current − Continuous
Electrostatic Discharge
Symbol
V_CEO
V_CBO
V_EBO
I_C
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 1)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 2)
Thermal Resistance,
Junction to Lead #3
R_θJL
Junction and Storage
Temperature Range
T_J, T_stg
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
Max
Unit
−35
Vdc
−50
Vdc
−5.0
Vdc
−1.0
−500
Adc
mAdc
HBM Class 3B
MM Class C
Max
Unit
210
mW
1.7
mW/°C
595
°C/W
365
mW
2.9
mW/°C
340
°C/W
205
°C/W
−55 to
°C
+150
http://onsemi.com
35 VOLTS
1.0 AMPS
PNP TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT−416/SC−75
STYLE 1
DEVICE MARKING
L1
L1 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NSL35TT1
SOT−416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
NSL35TT1/D