NSL12TT1 Datasheet, PDF (4/8 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon

NSL12TT1
1.2
V_CE = 3.0 V
55
1
50
–55°C
45
0.8
25°C
40
0.6
T_A = 125°C
35
0.4
30
0.2
25
0
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (AMPS)
20
1
0
Figure 7. Base Emitter Turn–On Voltage vs.
Collector Current
f = 1 MHz
I_C = 0 A
T_A = 25°C
1
2
3
4
5
6
V_EB, EMITTER BASE VOLTAGE
Figure 8. Input Capacitance
35
f = 1 MHz
I_E = 0 A
30
T_A = 25°C
25
20
15
10
0
2
4
6
8
10 12
14
V_CB, COLLECTOR BASE VOLTAGE
Figure 9. Output Capacitance
1
D = 0.50
D = 0.20
D = 0.10
0.1 D = 0.05
D = 0.01
0.01
0.0001
SINGLE PULSE
0.001
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
Copper Area = 0.048 square inches
R_θJA = 505.7 °C/W
0.01
0.1
1
10
t₁, TIME (s)
Figure 10. Normalized Thermal Response
100
1000
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