NSL12TT1 Datasheet, PDF (3/8 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon

NSL12TT1
1
0.1 ^{IC/IB = 200}
100
50
0.01
10
1
I_C/I_B = 100
0.1
–55°C
25°C
T_A = 125°C
0.001
0.001
T_A = 25°C
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
600
500
125°C
400
V_CE = 1.0 V
300
25°C
200
T_A = –55°C
100
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
1
I_C/I_B = 50
0.1
25°C
–55°C
T_A = 125°C
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1
0.9
T_A = 25°C
0.8
0.7
I_C = 1.0 A
0.6
0.5
0.4
50 mA
0.3
500 mA
0.2
250 mA
10 mA
0.1
100 mA
5.0 mA
0
0.00001 0.0001 0.001
0.01
0.1
1
I_B, BASE CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage
vs Base Current
1.2
1
–55°C
0.8
25°C
0.6
T_A = 125°C
0.4
0.2
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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