NSL12TT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon

NSL12TT1
High Current Surface
Mount PNP Silicon
Low V_CE(sat) Transistor for
Battery Operated
Applications
MAXIMUM RATINGS (T_A = 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Peak
Collector Current – Continuous
Electrostatic Discharge
Symbol
V_CEO
V_CBO
V_EBO
I_C
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 1)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 2)
Thermal Resistance,
Junction to Lead #3
R_θJL
Junction and Storage
Temperature Range
T_J, T_stg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
Max
Unit
–12
Vdc
–20
Vdc
–4.0
Vdc
–1.0
Adc
–0.5
HBM Class 3B
MM Class C
Max
Unit
210
mW
1.7
mW/°C
595
°C/W
365
mW
2.9
mW/°C
340
°C/W
205
°C/W
–55 to
°C
+150
http://onsemi.com
12 VOLTS
1.0 AMPS
PNP TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
DEVICE MARKING
L2
L2 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NSL12TT1
SOT–416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
February, 2002 – Rev. 2
Publication Order Number:
NSL12TT1/D