English
Language : 

NSL12TT1 Datasheet, PDF (2/8 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon
◁
NSL12TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–12
Collector–Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
V(BR)CBO
–20
Emitter–Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
V(BR)EBO
–4.0
Collector Cutoff Current
(VCB = –12 Vdc, IE = 0)
ICBO
–
Collector–Emitter Cutoff Current
(VCES = –9 Vdc)
ICES
–
Emitter Cutoff Current
(VEB = –4.0 Vdc)
IEBO
–
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = –100 mA, VCE = –1.0 V)
(IC = –100 mA, VCE = –2.0 V)
(IC = –500 mA, VCE = –2.0 V)
Collector–Emitter Saturation Voltage (Note 3)
(IC = –50 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –1.0 mA)
(IC = –250 mA, IB = –2.5 mA)
(IC = –250 mA, IB = –5.0 mA)
(IC = –500 mA, IB = –5.0 mA)
(IC = –500 mA, IB = –50 mA)
(IC = –1.0 A, IB = –100 mA)
hFE
150
150
100
VCE(sat)
–
–
–
–
–
–
–
Base–Emitter Saturation Voltage (Note 3)
(IC = –150 mA, IB = –20 mA)
VBE(sat)
–
Base–Emitter Turn–on Voltage (Note 3)
(IC = –150 mA, VCE = –3.0 V)
VBE(on)
–
Input Capacitance
(VEB = 0 V, f = 1.0 MHz)
Cibo
–
Output Capacitance
(VCB = 0 V, f = 1.0 MHz)
Cobo
–
Turn–On Time
(IBI = –50 mA, IC = –500 mA, RL = 3.0 Ω)
ton
–
Turn–Off Time
(IB1 = IB2 = –50 mA, IC = –500 mA, RL = 3.0 Ω)
toff
–
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
Figure 1.
Typical
Max
Unit
–18
–28
–7.0
–0.03
–0.03
–0.01
Vdc
–
Vdc
–
Vdc
–
mAdc
–0.1
mAdc
–0.1
mAdc
–0.1
200
–
200
–
150
–
V
–0.070 –0.110
–0.110 –0.150
–0.190 –0.240
–0.165
–
–0.300 –0.370
–0.210
–
–0.410
–
V
–0.81
–0.90
V
–0.81
–0.875
pF
52
–
pF
30
–
ns
50
–
ns
80
–
http://onsemi.com
2
 ▷