NSCT2907ALT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – General Purpose Transistors PNP Silicon

NSCT2907ALT1G
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V_CE = 10 Vdc, T_A = 25°C
10
10
f = 1.0 kHz
8.0
8.0
6.0
I_C = −1.0 mA, R_s = 430 W
6.0
−500 mA, R_s = 560 W
−50 mA, R_s = 2.7 kW
4.0
−100 mA, R_s = 1.6 kW
4.0
2.0
R_s = OPTIMUM SOURCE RESISTANCE
2.0
I_C = −50 mA
−100 mA
−500 mA
−1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
R_s, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
C_eb
10
7.0
5.0
C_cb
3.0
2.0
−0.1
−0.2 −0.3 −0.5 −1.0 −2.0 −3.0 −5.0 −10
REVERSE VOLTAGE (VOLTS)
−20 −30
Figure 9. Capacitances
400
300
200
100
80
V_CE = −20 V
60
T_J = 25°C
40
30
20
−1.0 −2.0
−5.0 −10 −20 −50 −100 −200
I_C, COLLECTOR CURRENT (mA)
−500 −1000
Figure 10. Current−Gain − Bandwidth Product
−1.0
T_J = 25°C
−0.8
−0.6
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V^CE = −10 V
−0.4
−0.2
V_CE(sat) @ I_C/I_B = 10
0
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500
I_C, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
+0.5
0
R_qVC for V_CE(sat)
−0.5
−1.0
−1.5
−2.0
R_qVB for V_BE
−2.5
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500
I_C, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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