NSCT2907ALT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – General Purpose Transistors PNP Silicon

3.0
2.0
1.0
0.7
0.5
0.3
0.2
−0.1
V_CE = −1.0 V
V_CE = −10 V
NSCT2907ALT1G
TYPICAL CHARACTERISTICS
T_J = 125°C
25°C
−55 °C
−0.2 −0.3 −0.5 −0.7 −1.0
−2.0 −3.0 −5.0 −7.0 −10
−20 −30
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
−50 −70 −100
−200 −300 −500
−1.0
−0.8
I_C = −1.0 mA
−0.6
−10 mA
−100 mA
−500 mA
−0.4
−0.2
0
−0.005 −0.01
−0.02 −0.03 −0.05 −0.07 −0.1
−0.2 −0.3 −0.5 −0.7 −1.0
I_B, BASE CURRENT (mA)
−2.0 −3.0
Figure 4. Collector Saturation Region
−5.0 −7.0 −10
−20 −30 −50
300
200
100
t_r
70
50
V_CC = −30 V
I_C/I_B = 10
T_J = 25°C
30
20
t_d @ V_BE(off) = 0 V
10
7.0
5.0
2.0 V
3.0
−5.0 −7.0 −10
−20 −30 −50 −70 −100 −200 −300 −500
I_C, COLLECTOR CURRENT
Figure 5. Turn−On Time
500
300
200
t_f
100
70
50
30
t′_s = t_s − 1/8 t_f
20
V_CC = −30 V
I_C/I_B = 10
I_B1 = I_B2
T_J = 25°C
10
7.0
5.0
−5.0 −7.0 −10
−20 −30 −50 −70 −100 −200 −300 −500
I_C, COLLECTOR CURRENT (mA)
Figure 6. Turn−Off Time
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