NSCT2907ALT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – General Purpose Transistors PNP Silicon

NSCT2907ALT1G
General Purpose Transistors
PNP Silicon
Features
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−60
−60
−5.0
−600
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @T_A = 25°C
Derate above 25°C
Symbol
Max
Unit
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
297 M G
G
1
297 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NSCT2907ALT1G
NSCT2907ALT3G
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 0
Publication Order Number:
NSCT2907ALT1/D