NSCT2907ALT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – General Purpose Transistors PNP Silicon

NSCT2907ALT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) (I_C = −10 mAdc, I_B = 0)
Collector −Base Breakdown Voltage (I_C = −10 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage (I_E = −10 mAdc, I_C = 0)
Collector Cutoff Current (V_CE = −30 Vdc, V_EB(off) = −0.5 Vdc)
Collector Cutoff Current
(V_CB = −50 Vdc, I_E = 0)
(V_CB = −50 Vdc, I_E = 0, T_A = 125°C)
Base Cutoff Current (V_CE = −30 Vdc, V_EB(off) = −0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I_C = −0.1 mAdc, V_CE = −10 Vdc)
(I_C = −1.0 mAdc, V_CE = −10 Vdc)
(I_C = −10 mAdc, V_CE = −10 Vdc)
(I_C = −150 mAdc, V_CE = −10 Vdc)
(I_C = −500 mAdc, V_CE = −10 Vdc) (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
(I_C = −150 mAdc, I_B = −15 mAdc) (Note 3)
(I_C = −500 mAdc, I_B = −50 mAdc)
Base −Emitter Saturation Voltage (Note 3)
(I_C = −150 mAdc, I_B = −15 mAdc)
(I_C = −500 mAdc, I_B = −50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Notes 3, 4), (I_C = −50 mAdc, V_CE = −20 Vdc,
f = 100 MHz)
Output Capacitance (V_CB = −10 Vdc, I_E = 0, f = 1.0 MHz)
Input Capacitance (V_EB = −2.0 Vdc, I_C = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
(V_CC = −30 Vdc, I_C = −150 mAdc,
I_B1 = −15 mAdc)
Turn−Off Time
Storage Time
Fall Time
(V_CC = −6.0 Vdc, I_C = −150 mAdc,
I_B1 = I_B2 = −15 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f_T is defined as the frequency at which |h_fe| extrapolates to unity.
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CEX
I_CBO
I_BL
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_obo
C_ibo
t_on
t_d
t_r
t_off
t_s
t_f
Min
Max
Unit
−60
−
Vdc
−60
−
Vdc
−5.0
−
Vdc
−
−50
nAdc
mAdc
−
−0.010
−
−10
−
−50
nAdc
−
75
−
100
−
100
−
100
300
50
−
Vdc
−
−0.4
−
−1.6
Vdc
−
−1.3
−
−2.6
200
−
MHz
−
8.0
pF
−
30
−
45
−
10
−
40
ns
−
100
−
80
−
30
INPUT
Z_o = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
−16 V
1.0 k
50
−30 V
200
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT
Z_o = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
−30 V
+15 V −6.0 V
1.0 k 37
1.0 k
50
1N916
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
200 ns
Figure 2. Storage and Fall Time Test Circuit
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