MTD1312 Datasheet, PDF (4/11 Pages) ON Semiconductor – N−Channel DPAK Power MOSFET

MTD1312
TYPICAL ELECTRICAL CHARACTERISTICS
40
10 V
35
6.0 V
30
T_J = 25°C
3.3 V
25
4.5 V
20
3.7 V
15
10
V_GS = 2.7 V
5.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
35 ^VDS ^{≥ 10 V}
30
25
20
15
10
5.0
0
0
T_J = 125°C
25°C
−55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.10
0.020
I_D = 10 A
T_J = 25°C
0.08
T_J = 25°C
V_GS = 4.5 V
0.015
0.06
10 V
0.010
0.04
0.005
0.02
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
V_GS, GATE−TO−SOURCE (VOLTS)
Figure 3. On−Resistance versus
Drain Current
0
0
10
20
30
40
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
I_D = 10 A
V_GS = 10 V
1.5
1.0E−07
1.0E−08
T_J = 125°C
100°C
1.0
25°C
1.0E−09
0.5
0
−50 −25
0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.0E−10
150
0
V_GS = 0 V
10
20
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
4