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MTD1312 Datasheet, PDF (2/11 Pages) ON Semiconductor – N−Channel DPAK Power MOSFET | |||
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MTD1312
POWER RATINGS (TC = 25°C unless otherwise specified)
Parameter
Drain Current â Continuous
Drain Current â Single Pulse (tp ⤠10 ms)
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
â JunctionâtoâCase
Mounted on heat sink
TC = 25°C
VGS = 10 Vdc
Steady State
Symbol
ID
IDM
IS
PD
RθJC
Value
25
75
25
72
1.72
Unit
Adc
Apk
Adc
Watts
°C/W
Drain Current â Continuous
Drain Current â Single Pulse (tp ⤠10 ms)
Parameter
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
â JunctionâtoâAmbient
Mounted on minimum
recommended
FRâ4 or Gâ10 board
VGS = 10 Vdc
Steady State
Symbol
ID
IDM
IS
PD
RθJA
Value
6.0
18
1.1
1.0
118
Unit
Adc
Apk
Adc
Watts
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristics
Symbol
Min
OFF CHARACTERISTICS
DrainâtoâSource Breakdown Voltage (Notes 1 & 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateâBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IDSS
â
â
IGSS
â
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Notes 1 & 3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
â
Static DrainâtoâSource OnâResistance (Notes 1 & 3)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
Forward Transconductance
(VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1)
RDS(on)
â
â
gFS
â
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
â
Coss
â
Transfer Capacitance
1. Pulse Test: Pulse Width ⤠300 μs, Duty Cycle ⤠2%.
Crss
â
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Typ
Max
Unit
Vdc
â
â
(30)
mV/°C
μAdc
â
1.0
â
(10)
nAdc
â
500
1.4
(4.3)
10
14
5.4
Vdc
2.0
â
mV/°C
mW
16
20
Mhos
â
1110
1540
pF
490
690
150
210
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