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MTD1312 Datasheet, PDF (2/11 Pages) ON Semiconductor – N−Channel DPAK Power MOSFET
MTD1312
POWER RATINGS (TC = 25°C unless otherwise specified)
Parameter
Drain Current − Continuous
Drain Current − Single Pulse (tp ≤ 10 ms)
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
− Junction−to−Case
Mounted on heat sink
TC = 25°C
VGS = 10 Vdc
Steady State
Symbol
ID
IDM
IS
PD
RθJC
Value
25
75
25
72
1.72
Unit
Adc
Apk
Adc
Watts
°C/W
Drain Current − Continuous
Drain Current − Single Pulse (tp ≤ 10 ms)
Parameter
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
− Junction−to−Ambient
Mounted on minimum
recommended
FR−4 or G−10 board
VGS = 10 Vdc
Steady State
Symbol
ID
IDM
IS
PD
RθJA
Value
6.0
18
1.1
1.0
118
Unit
Adc
Apk
Adc
Watts
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristics
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Notes 1 & 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IDSS
−
−
IGSS
−
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Notes 1 & 3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
−
Static Drain−to−Source On−Resistance (Notes 1 & 3)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
Forward Transconductance
(VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1)
RDS(on)
−
−
gFS
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Transfer Capacitance
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
Crss
−
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Typ
Max
Unit
Vdc
−
−
(30)
mV/°C
μAdc
−
1.0
−
(10)
nAdc
−
500
1.4
(4.3)
10
14
5.4
Vdc
2.0
−
mV/°C
mW
16
20
Mhos
−
1110
1540
pF
490
690
150
210
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