MTD1312 Datasheet, PDF (3/11 Pages) ON Semiconductor – N−Channel DPAK Power MOSFET

MTD1312
ELECTRICAL CHARACTERISTICS − (continued) (T_C = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 24 Vdc, I_D = 20 Adc,
V_GS = 10 Vdc,
R_G = 6.0 Ω) (Note 4)
Gate Charge
(V_DS = 15 Vdc, I_D = 10 Adc,
V_GS = 10 Vdc) (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 10 Adc, V_GS = 0 Vdc) (Note 4)
(I_S = 10 Adc, V_GS = 0 Vdc,
T_J = 125°C)
Reverse Recovery Time
(I_S = 20 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs) (Note 4)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values.
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
t_a
t_b
Q_RR
−
8.0
16
ns
−
45
90
−
50
100
−
90
180
−
35
50
nC
−
3.5
−
−
10
−
−
−
−
Vdc
−
0.81
1.0
−
(0.61)
−
−
40
−
ns
−
20
−
−
20
−
−
0.04
−
μC
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