MTD1312 Datasheet, PDF (1/11 Pages) ON Semiconductor – N−Channel DPAK Power MOSFET

MTD1312
Advance Information
Power MOSFET
25 Amps, 30 Volts
N−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters, and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode Is Characterized for Use In Bridge Circuits
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
Vdc
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
V_DGR
30
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
V_GS
V_GSM
± 20 Vdc
± 20 Vpk
Operating and Storage Temperature Range T_J, T_stg − 55 to °C
150
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
25 AMPERES
30 VOLTS
R_DS(on) = 16 mΩ
N−Channel
D
G
S
MARKING
DIAGRAM
12
3
4
CASE 369A
DPAK
STYLE 2
Y
= Year
WW
= Work Week
MTD1312 = Device Code
YWW
MTD
1312
PIN ASSIGNMENT
4
Drain
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD1312T4
DPAK 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
MTD1312/D