MMDF2C03HD Datasheet, PDF (4/10 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MMDF2C03HD
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
0.6
I_D = 1.5 A
0.5
T_J = 25°C
0.4
0.3
0.2
0.1
0
2
3
4
5
6
7
8
9 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.08
T_J = 25°C
0.07
V_GS = 4.5
0.06
10 V
0.6
I_D = 1 A
T_J = 25°C
0.5
P−Channel
0.4
0.3
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.30
T_J = 25°C
0.25
V_GS = 4.5 V
0.20
10 V
0.15
0.05
0
0.5
1
1.5
2
2.5
3
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
V_GS = 10 V
I_D = 1.5 A
1.5
1.0
0.5
0
−50 −25
0
25 50 75 100
T_J, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
0.10
0 0.5 1 1.5 2 2.5 3 3.5 4
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
V_GS = 10 V
I_D = 2 A
1.4
1.2
1.0
0.8
0.6
−50 − 25
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
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