MMDF2C03HD Datasheet, PDF (2/10 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MMDF2C03HD
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol Polarity Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 mAdc)
V_(BR)DSS
−
Zero Gate Voltage Drain Current
(V_DS = 30 Vdc, V_GS = 0 Vdc)
I_DSS
(N)
(P)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
I_GSS
−
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 mAdc)
V_GS(th)
(N)
(P)
Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 3.0 Adc)
(V_GS = 10 Vdc, I_D = 2.0 Adc)
R_DS(on)
(N)
(P)
Drain−to−Source On−Resistance
(V_GS = 4.5 Vdc, I_D = 1.5 Adc)
(V_GS = 4.5 Vdc, I_D = 1.0 Adc)
R_DS(on)
(N)
(P)
Forward Transconductance
(V_DS = 3.0 Vdc, I_D = 1.5 Adc)
(V_DS = 3.0 Vdc, I_D = 1.0 Adc)
g_FS
(N)
(P)
DYNAMIC CHARACTERISTICS
Input Capacitance
C_iss
(N)
(P)
Output Capacitance
(V_DS = 24 Vdc, V_GS = 0 Vdc,
C_oss
(N)
f = 1.0 MHz)
(P)
Transfer Capacitance
C_rss
(N)
(P)
Vdc
30
−
−
−
−
1.0
mAdc
−
−
1.0
−
−
100
nAdc
1.0
1.7
3.0
Vdc
1.0
1.5
2.0
W
−
0.06 0.070
−
0.17 0.200
W
−
0.065 0.075
−
0.225 0.300
2.0
3.6
2.0
3.4
mhos
−
−
−
450
630
pF
−
397
550
−
160
225
−
189
250
−
35
70
−
64
126
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 15 Vdc, I_D = 3.0 Adc,
V_GS = 4.5 Vdc, R_G = 9.1 W)
(V_DD = 15 Vdc, I_D = 2.0 Adc,
V_GS = 4.5 Vdc, R_G = 6.0 W)
t_d(on)
t_r
t_d(off)
t_f
(N)
−
12
24
ns
(P)
−
16
32
(N)
−
65
130
(P)
−
18
36
(N)
−
16
32
(P)
−
63
126
(N)
−
19
38
(P)
−
194
390
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 15 Vdc, I_D = 3.0 Adc,
V_GS = 10 Vdc, R_G = 9.1 W)
(V_DD = 15 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc, R_G = 6.0 W)
t_d(on)
t_r
t_d(off)
t_f
(N)
−
8.0
16
(P)
−
9.0
18
(N)
−
15
30
(P)
−
10
20
(N)
−
30
60
(P)
−
81
162
(N)
−
23
46
(P)
−
192
384
Total Gate Charge
Q_T
(N)
−
11.5
16
nC
(P)
−
14.2
19
Gate−Source Charge
Gate−Drain Charge
(V_DS = 10 Vdc, I_D = 3.0 Adc,
Q₁
V_GS = 10 Vdc)
(V_DS = 24 Vdc, I_D = 2.0 Adc,
Q₂
V_GS = 10 Vdc)
Q₃
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
(N)
−
1.5
−
(P)
−
1.1
−
(N)
−
3.5
−
(P)
−
4.5
−
(N)
−
2.8
−
(P)
−
3.5
−
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