MMDF2C03HD Datasheet, PDF (3/10 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MMDF2C03HD
ELECTRICAL CHARACTERISTICS − continued (T_A = 25°C unless otherwise noted) (Note 6)
Characteristic
Symbol Polarity Min
Typ
Max
Unit
SOURCE−DRAIN DIODE CHARACTERISTICS (T_C = 25°C)
Forward Voltage (Note 7)
(I_S = 3.0 Adc, V_GS = 0 Vdc)
V_SD
(I_S = 2.0 Adc, V_GS = 0 Vdc)
Reverse Recovery Time
t_rr
(N)
−
0.82
1.2
Vdc
(P)
−
1.82
2.0
(N)
−
24
−
ns
(P)
−
42
−
t_a
(N)
−
17
−
(P)
−
16
−
(I_F = I_S, dI_S/dt = 100 A/ms)
t_b
(N)
−
7.0
−
(P)
−
26
−
Reverse Recovery Storage
Charge
Q_RR
(N)
−
0.025
−
mC
(P)
−
0.043
−
6. Negative signs for P−Channel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
P−Channel
6
V_GS = 10 V
5 ^{4.5 V}
4.3 V
4 ^{4.1 V}
3.9 V
3.7 V
3.5 V
3.3 V
T_J = 25°C
4
V_GS = 10 V 4.5 V
3.9 V
3
3.7 V _{3.5 V} ^TJ ^{= 25°C}
3.3 V
3
3.1 V
2
3.1 V
2
2.9 V
1
0
0 0.2 0.4 0.6 0.8
2.7 V
2.5 V
1 1.2 1.4 1.6 1.8 2
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
6
V_DS ≥ 10 V
5
4
T_J = 100°C
3
2
25°C
1
− 55°C
0
2
2.5
3
3.5
4
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.9 V
1
2.7 V
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4
V_DS ≥ 10 V
3
2
T_J = 100°C
25°C
1
− 55°C
0
1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
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