MMDF2C03HD Datasheet, PDF (1/10 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MMDF2C03HD
Preferred Device
Power MOSFET
2 Amps, 30 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Features
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO-8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO-8 Package Provided
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current − Continuous
Drain Current − Pulsed
N−Channel
P−Channel
N−Channel
P−Channel
V_DSS
V_GS
I_D
I_DM
30
Vdc
± 20
Vdc
4.1
A
3.0
21
15
Operating and Storage Temperature Range
Total Power Dissipation @ T_A= 25°C (Note 2)
Thermal Resistance, Junction−to−Ambient
(Note 2)
T_J, T_stg
P_D
R_qJA
− 55 to 150
2.0
62.5
°C
W
°C/W
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 30 V, V_GS = 5.0 V, Peak I_L = 9.0 Apk,
L = 8.0 mH, R_G = 25 W)
N−Channel
(V_DD = 30 V, V_GS = 5.0 V, Peak I_L = 6.0 Apk,
L = 18 mH, R_G = 25 W)
P−Channel
Max Lead Temperature for Soldering, 0.0625″
T_L
from case. Time in Solder Bath is 10 seconds
mJ
324
324
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 7
http://onsemi.com
2 AMPERES, 30 VOLTS
R_DS(on) = 70 mW (N-Channel)
R_DS(on) = 200 mW (P-Channel)
N−Channel
D
P−Channel
D
G
G
S
S
MARKING
DIAGRAM
8
1
SO−8
CASE 751
STYLE 14
8
D2C03
AYWWG
G
1
D2C03 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
N−Source
N−Gate
P−Source
P−Gate
1 8 ^N−Drain
2 7 N−Drain
3 6 P−Drain
4 5 P−Drain
ORDERING INFORMATION
Device
Package
Shipping^†
MMDF2C03HDR2 SO−8 2500 Tape & Reel
MMDF2C03HDR2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMDF2C03HD/D