MMBF5460LT1_06 Datasheet, PDF (4/5 Pages) ON Semiconductor – JFET - General Purpose Transistor P-Channel

1000
700
500
300
200
100
70
50
30
20
10
0.1
MMBF5460LT1
10
V_DS = 15 V
9.0
f = 1.0 kHz
8.0
7.0
I_DSS = 3.0 mA
6.0
5.0
6.0 mA
4.0
10 mA
3.0
2.0
0.2
0.5
1.0
2.0
I_D, DRAIN CURRENT (mA)
1.0
0
5.0
10
0
Figure 7. Output Resistance
versus Drain Current
f = 1.0 MHz
V_GS = 0
C_iss
C_oss
C_rss
10
20
30
40
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance versus
Drain−Source Voltage
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
1.0
V_DS = 15 V
V_GS = 0
f = 100 Hz
10
100
1000
R_S, SOURCE RESISTANCE (k Ohms)
Figure 9. Noise Figure versus
Source Resistance
10,000
v_i
C_iss
C_rss
r_oss
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
C_oss
| y_fs | v_i
y_is = jW C_iss
y_os = jW C_osp * + 1/r_oss
y_fs = y_fs |
y_rs = −jW C_rss
*C_osp is C_oss in parallel with Series Combination of C_iss and C_rss.
NOTE:
1. Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Figure 10. Equivalent Low Frequency Circuit
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