MMBF5460LT1_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – JFET - General Purpose Transistor P-Channel

MMBF5460LT1
JFET − General Purpose
Transistor
P−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Gate Voltage
Reverse Gate−Source Voltage
Forward Gate Current
THERMAL CHARACTERISTICS
V_DG
V_GSR
I_GF
40
Vdc
40
Vdc
10
mAdc
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
Symbol
Max
Unit
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
M6E M G
G
1
M6E = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBF5460LT1 SOT−23 3,000 / Tape & Reel
MMBF5460LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
MMBF5460LT1/D