MMBF5460LT1_06 Datasheet, PDF(2/5 Page) ON Semiconductor – JFET

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MMBF5460LT1_06 Datasheet, PDF (2/5 Pages) ON Semiconductor – JFET - General Purpose Transistor P-Channel

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MMBF5460LT1

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

GateâSource Breakdown Voltage

(IG = 10 mAdc, VDS = 0)

V(BR)GSS

Vdc

Gate Reverse Current

(VGS = 20 Vdc, VDS = 0)

(VGS = 20 Vdc, VDS = 0, TA = 100Â°C)

IGSS

5.0

nAdc

1.0

mAdc

Gate Source Cutoff Voltage

(VDS = 15 Vdc, ID = 1.0 mAdc)

VGS(off)

0.75

6.0

Vdc

Gate Source Voltage

(VDS = 15 Vdc, ID = 0.1 mAdc)

VGS

0.5

4.0

Vdc

ON CHARACTERISTICS

ZeroâGateâVoltage Drain Current

(VDS = 15 Vdc, VGS = 0)

IDSS

â1.0

â 5.0

mAdc

SMALLâSIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

|Yfs|

1000

4000 mmhos

Output Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

|yos|

mmhos

Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

5.0

7.0

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Crss

1.0

2.0

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