MMBF5460LT1_06 Datasheet, PDF (3/5 Pages) ON Semiconductor – JFET - General Purpose Transistor P-Channel

MMBF5460LT1
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
4.0
V_DS = 15 V
3.5
3.0
2.5
2.0
T_A = −55°C
1.5
25°C
125°C
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_GS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. V_GS(off) = 2.0 Volts
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
4000
3000
2000
1000
700
500
300
200
0.2
V_DS = 15 V
f = 1.0 kHz
0.3
0.5 0.7 1.0
2.0
I_D, DRAIN CURRENT (mA)
Figure 4. V_GS(off) = 2.0 Volts
3.0 4.0
10
9.0
V_DS = 15 V
8.0
7.0
T_A = −55°C
6.0
25°C
5.0
125°C
4.0
3.0
2.0
1.0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 2. V_GS(off) = 4.0 Volts
10000
7000
5000
3000
2000
1000
700
500
0.5 0.7
V_DS = 15 V
f = 1.0 kHz
1.0
2.0 3.0
5.0 7.0
I_D, DRAIN CURRENT (mA)
Figure 5. V_GS(off) = 4.0 Volts
16
V_DS = 15 V
14
12
10
T_A = −55°C
8.0
25°C
125°C
6.0
4.0
2.0
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V_GS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 3. V_GS(off) = 5.0 Volts
10000
7000
5000
3000
2000
1000
700
500
0.5 0.7
V_DS = 15 V
f = 1.0 kHz
1.0
2.0 3.0
5.0 7.0 10
I_D, DRAIN CURRENT (mA)
Figure 6. V_GS(off) = 5.0 Volts
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