MMBF170LT1_08 Datasheet, PDF (4/5 Pages) ON Semiconductor – Power MOSFET 500 mA, 60 V N-Channel SOT-23

MMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.4
2.2 ^{VGS = 10 V}
I_D = 200 mA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-ā60
-ā20
20
60
100
T, TEMPERATURE (°C)
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
140
-ā60
Figure 8. Temperature versus Static
Drain-Source On-Resistance
V_DS = V_GS
I_D = 1.0 mA
-ā20
20
60
100
140
T, TEMPERATURE (°C)
Figure 9. Temperature versus Gate
Threshold Voltage
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