MMBF170LT1_08 Datasheet, PDF (2/5 Pages) ON Semiconductor – Power MOSFET 500 mA, 60 V N-Channel SOT-23

MMBF170LT1
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V_GS = 0, I_D = 100 mA)
Gate-Body Leakage Current, Forward (V_GSF = 15 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V_DS = V_GS, I_D = 1.0 mA)
Static Drain-Source On-Resistance (V_GS = 10 Vdc, I_D = 200 mA)
On-State Drain Current (V_DS = 25 Vdc, V_GS = 0)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V_DS = 10 Vdc, V_GS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
Turn-On Delay Time
Turn-Off Delay Time
(V_DD = 25 Vdc, I_D = 500 mA, R_gen = 50 W)
Figure 1
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V_(BR)DSS
I_GSS
V_GS(th)
r_DS(on)
I_D(off)
C_iss
t_d(on)
t_d(off)
Min
Max
Unit
60
-
Vdc
-
10
nAdc
0.8
3.0
Vdc
-
5.0
W
-
0.5
mA
-
60
pF
-
10
ns
-
10
ORDERING INFORMATION
Device
Package
Shipping^†
MMBF170LT1
SOT-23 (TO-236)
3,000 Tape & Reel
MMBF170LT1G
SOT-23 (TO-236)
(Pb-Free)
3,000 Tape & Reel
MMBF170LT3
SOT-23 (TO-236)
10,000 Tape & Reel
MMBF170LT3G
SOT-23 (TO-236)
(Pb-Free)
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
PULSE
GENERATOR
50 W
125 W
V_in
40 pF
50 W 1 MW
20 dB 50 W
ATTENUATOR
TO SAMPLING
SCOPE
50 W INPUT
V_out
t_on
t_d(on)
OUTPUT
INVERTED
V_out
INPUT
V_in ^10%
(V_in AMPLITUDE 10 VOLTS)
t_r
t_d(off)
90%
10%
50%
PULSE WIDTH
t_off
t_f
90%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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2