MMBF170LT1_08 Datasheet, PDF (3/5 Pages) ON Semiconductor – Power MOSFET 500 mA, 60 V N-Channel SOT-23

MMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0
0
V_GS = 10 V
T_J = 25°C
5.0 V
4.5 V
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
1
2
3
4
5
6
7
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3. On-Region Characteristics
1.0
V_DS ≥ 10 V
0.8
0.6
0.4
T_J = 150°C
0.2 _{TJ = 25°C}
T_J = -55°C
0
1
2
3
4
5
6
7
8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4. Transfer Characteristics
8
7 ^{TJ = 25°C}
6
5
4
3
2
V_GS = 4.5 V
1
V_GS = 10 V
0
0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85
I_D, DRAIN CURRENT (A)
Figure 5. On-Resistance vs. Drain Current and
Gate Voltage
15
12.5
10
7.5
5
2.5
0
0
30
QT
25
V_DS
Q_gs
Q_gd
20
V_GS
15
10
I_D = 0.5 A ₅
T_J = 25°C
0
0.5
1
1.5
2
Q_g, TOTAL GATE CHARGE (nC)
Figure 6. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
0.24
0.22 ^VGS ^{= 0 V}
0.20 ^{TJ = 25°C}
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
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