MMBF170LT1_08 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 500 mA, 60 V N-Channel SOT-23

MMBF170LT1
Power MOSFET
500 mA, 60 V
N-Channel SOT-23
Features
•ăPb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (t_p ≤ 50 ms)
Drain Current - Continuous
- Pulsed
V_DSS
60
Vdc
V_DGS
60
Vdc
V_GS
±ā20
Vdc
V_GSM
±ā40
Vpk
I_D
0.5
Adc
I_DM
0.8
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR-ā5 Board
(Note 1.) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8 mW/°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
556
-ā55 to
+150
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-ā5 = 1.0  0.75  0.062 in.
http://onsemi.com
500 mA, 60 V
R_DS(on) = 5 W
SOT-23
CASE 318
STYLE 21
N-Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain
6Z MG
G
Gate 1
2 Source
6Z
= Specific Device Code
M
= Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2008
1
April, 2008 - Rev. 6
Publication Order Number:
MMBF170LT1/D