MJW3281A Datasheet, PDF (4/8 Pages) ON Semiconductor – Complementary NPN-PNP Silicon Power Bipolar Transistors

MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
3.0
NPN MJW3281A
2.5
2.5
TJ = 25°C
IC/IB = 10
2.0
1.5
1.0
VBE(sat)
2.0
TJ = 25°C
IC/IB = 10
1.5
1.0
VBE(sat)
0.5
0
0.1
VCE(sat)
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
0.5
0
0.1
VCE(sat)
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
10
TJ = 25°C
PNP MJW1302A
10
TJ = 25°C
NPN MJW3281A
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
1.0
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base–Emitter Voltage
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base–Emitter Voltage
PNP MJW1302A
100
NPN MJW3281A
100
10 mSec
10 mSec
10
10
100 mSec
100 mSec
1 Sec
1 Sec
1.0
1.0
0.1
1.0
10
100
1000
VCE, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
0.1
1.0
10
100
1000
VCE, COLLECTOR EMITTER (VOLTS)
Figure 14. Active Region Safe Operating Area
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