MJW3281A Datasheet, PDF (3/8 Pages) ON Semiconductor – Complementary NPN-PNP Silicon Power Bipolar Transistors

MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
NPN MJW3281A
1000
1000
TJ = 100°C
25°C
100
100
-ā25°C
25°C
TJ = 100°C
-ā25°C
VCE = 20 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, VCE = 20 V
VCE = 20 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW1302A
1000
NPN MJW3281A
1000
TJ = 100°C
100
25°C
-ā25°C
25°C
TJ = 100°C
100
-ā25°C
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 5 V
PNP MJW1302A
45
40
1.5 A
IB = 2 A
35
30
1A
25
0.5 A
20
15
10
5.0
TJ = 25°C
0
0
5.0
10
15
20
25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
NPN MJW3281A
45
1.5 A
IB = 2 A
40
35
1A
30
0.5 A
25
20
15
10
5.0
TJ = 25°C
0
0
5.0
10
15
20
25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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