MJW3281A Datasheet, PDF (1/8 Pages) ON Semiconductor – Complementary NPN-PNP Silicon Power Bipolar Transistors

MJW3281A (NPN)
MJW1302A (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJW3281A and MJW1302A are PowerBase t power
transistors for high power audio, disk head positioners and other linear
applications.
• Designed for 100 W Audio Frequency
• Gain Complementary:
Gain Linearity from 100 mA to 7 A
hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area – 1 A/100 V @ 1 Second
• High fT – 30 MHz Typical
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current – Continuous
Collector Current – Peak (Note 1)
VCEO
230
VCBO
230
VEBO
5.0
VCEX
230
IC
15
25
Base Current – Continuous
IB
1.5
Total Power Dissipation @ TC = 25°C
PD
200
Derate Above 25°C
1.43
Operating and Storage Junction
Temperature Range
TJ, Tstg
–ā65 to
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance,
Junction to Case
R_θJC
0.7
Thermal Resistance,
Junction to Ambient
R_θJA
40
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
°C/W
http://onsemi.com
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
230 VOLTS
200 WATTS
1
2
3
TO–247
CASE 340K
STYLE 3
MARKING DIAGRAM
MJW
xxxxA
LLYWW
1 BASE
3 EMITTER
2 COLLECTOR
MJWxxxxA = Device Code
xxxx
= 3281 OR 1302
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJW3281A
TO–247
30 Units/Rail
MJW1302A
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 – Rev. 1
Publication Order Number:
MJW3281A/D