MJW3281A Datasheet, PDF (2/8 Pages) ON Semiconductor – Complementary NPN-PNP Silicon Power Bipolar Transistors

MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
230
–
Vdc
–
Collector Cutoff Current
(VCB = 230 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
ICBO
–
IEBO
–
µAdc
–
50
µAdc
–
5
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
Adc
4
–
–
1
–
–
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
hFE
50
50
50
50
50
45
12
VCE(sat)
–
–
125
200
–
200
–
200
–
200
115
200
–
–
35
–
Vdc
0.4
2
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Vdc
–
–
2
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
MHz
–
30
–
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
–
pF
–
600
PNP MJW1302A
50
VCE = 10 V
40
5V
30
20
10 TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
NPN MJW3281A
60
VCE = 10 V
50
5V
40
30
20
10
TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
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2