2N5190G Datasheet, PDF (4/6 Pages) ON Semiconductor – Silicon NPN Power Transistors

2N5190G, 2N5191G, 2N5192G
10³
V_CE = 30 V
10²
10¹
T_J = 150°C
10⁰
100°C
10^-1
REVERSE
FORWARD
10^- 2
25°C
10^- 3
I_CES
- 0.4 - 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
V_BE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cut−Off Region
TURN-ON PULSE
APPROX
V_CC
R_C
+11 V
V_in
R_B
SCOPE
V_in 0
V_EB(off)
t₁
t₃
C_jd << C_eb
- 4.0 V
APPROX
+11 V
V_in
t₁ ≤ 7.0 ns
100 < t₂ < 500 ms
t₃ < 15 ns
R_B and R_C varied
to obtain desired
current levels
t₂
TURN-OFF PULSE
DUTY CYCLE ≈ 2.0%
APPROX - 9.0 V
Figure 7. Switching Time Equivalent Test Circuit
10⁷
I_C = 10 x I_CES
10⁶
10^{5 IC ≈ ICES}
I_C = 2 x I_CES
10⁴
V_CE = 30 V
10³
(TYPICAL I_CES VALUES
OBTAINED FROM FIGURE 5)
10²
20
40
60
80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Effects of Base−Emitter Resistance
300
T_J = + 25°C
200
100
C_eb
70
50
C_cb
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
20 30 40
2.0
1.0
0.7
t_r @ V_CC = 30 V
0.5
0.3
0.2
t_r @ V_CC = 10 V
I_C/I_B = 10
T_J = 25°C
0.1
0.07
0.05
0.03
0.02
0.05 0.07 0.1
t_d @ V_EB(off) = 2.0 V
0.2 0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 9. Turn−On Time
2.0 3.0 4.0
2.0
t_s′
1.0
0.7
t_f @ V_CC = 30 V
0.5
0.3
t_f @ V_CC = 10 V
0.2
0.1
0.07
0.05
0.03
0.02
0.05 0.07 0.1
I_B1 = I_B2
I_C/I_B = 10
t_s′ = t_s - 1/8 t_f
T_J = 25°C
0.2 0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 10. Turn−Off Time
2.0 3.0 4.0
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