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2N5190G Datasheet, PDF (2/6 Pages) ON Semiconductor – Silicon NPN Power Transistors
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2N5190G, 2N5191G, 2N5192G
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
2N5190G
2N5191G
2N5192G
VCEO(sus)
40
60
80
Vdc
−
−
−
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N5190G
(VCE = 60 Vdc, IB = 0)
2N5191G
(VCE = 80 Vdc, IB = 0)
2N5192G
ICEO
−
−
−
mAdc
1.0
1.0
1.0
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5192G
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5192G
ICEX
−
−
−
−
−
−
mAdc
0.1
0.1
0.1
2.0
2.0
2.0
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N5190G
(VCB = 60 Vdc, IE = 0)
2N5191G
(VCB = 80 Vdc, IE = 0)
2N5192G
ICBO
−
−
−
mAdc
0.1
0.1
0.1
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
IEBO
−
hFE
25
20
10
7.0
mAdc
1.0
−
100
80
−
−
Collector−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
Base−Emitter On Voltage
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VCE(sat)
−
−
VBE(on)
−
Vdc
0.6
1.4
Vdc
1.2
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
MHz
2.0
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*JEDEC Registered Data.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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