2N5190G Datasheet, PDF (3/6 Pages) ON Semiconductor – Silicon NPN Power Transistors

2N5190G, 2N5191G, 2N5192G
10
7.0
T_J = 150°C
5.0
3.0
2.0
1.0
0.7
25°C
- 55°C
0.5
0.3
0.2
0.1
0.004 0.007 0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
V_CE = 2.0 V
V_CE = 10 V
2.0 3.0 4.0
2.0
T_J = 25°C
1.6
1.2
I_C = 10 mA
0.8
100 mA
1.0 A
3.0 A
0.4
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
I_B, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
50 70 100
200 300 500
2.0
T_J = 25°C
1.6
1.2
0.8
V_BE(sat) @ I_C/I_B = 10
V_BE @ V_CE = 2.0 V
0.4
V_CE(sat) @ I_C/I_B = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
2.0 3.0 4.0
+ 2.5
+ 2.0
+ 1.5
hFE @ VCE  +  2.0 V
*APPLIES FOR I_C/I_B ≤
2
T_J = - 65°C to +150°C
+ 1.0
+ 0.5
*q_V for V_CE(sat)
0
- 0.5
- 1.0
- 1.5
q_V for V_BE
- 2.0
- 2.5
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
I_C, COLLECTOR CURRENT (AMP)
Figure 4. Temperature Coefficients
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