2N5190G Datasheet, PDF (1/6 Pages) ON Semiconductor – Silicon NPN Power Transistors

2N5190G, 2N5191G,
2N5192G
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits − excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5190G
2N5191G
2N5192G
V_CEO
Vdc
40
60
80
Collector−Base Voltage
2N5190G
2N5191G
2N5192G
V_CBO
Vdc
40
60
80
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
V_EBO
I_C
I_B
P_D
5.0
Vdc
4.0
Adc
1.0
Adc
40
W
320
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg – 65 to + 150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case R_qJC
3.12
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 15
http://onsemi.com
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
2
N519xG
Y
=
WW =
2N519x =
G
=
Year
Work Week
Device Code
x = 0, 1, or 2
Pb−Free Package
ORDERING INFORMATION
Device
2N5190G
2N5191G
2N5192G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
500 Units/Box
Publication Order Number:
2N5191/D