NSL12AW Datasheet, PDF (3/4 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications

NSL12AW
0.5
0.4
2A
0.3
0.2
1A
0.1
I_C = 100 mA
800 mA
500 mA
0
1
10
100
I_B, BASE CURRENT (mA)
Figure 1. Collector Emitter Voltage versus
Base Current
0.5
0.4
0.3
0.2
I_C/I_B = 100
0.1
0
0.001
I_C/I_B = 10
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. Collector Emitter Voltage versus
Collector Current
400
125°C
300
V_CE = 1.5 V
200 ^25°C
100 _{TA = –55°C}
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector
Current
1.0
0.9
0.8 ^{TA = –55°C}
0.7
25°C
0.6
0.5
0.4 ^125°C
0.3
0.001
0.01
V_CE = 1.5 V
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Base Emitter Voltage versus
Collector Current
1.0
10
0.9
I_C/I_B = 10
0.8
I_C/I_B = 100
0.7
0.6
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Base Emitter Saturation Voltage
versus Base Current
dc
1
1 s 100 ms 10 ms
1 ms
0.1
SINGLE PULSE T_A = 25°C
0.01
0.1
1
10
V_CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 6. Safe Operating Area
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3