NSL12AW Datasheet, PDF (1/4 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications

NSL12AW
High Current Surface Mount
PNP Silicon Low V_CE(sat)
Transistor for Battery
Operated Applications
Features:
• High Current Capability (3 A)
• High Power Handling (Up to 650 mW)
• Low V_CE(s) (170 mV Typical @ 1 A)
• Small Size
Benefits:
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (T_A = 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Collector Current – Peak
Electrostatic Discharge
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 1)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 2)
Thermal Resistance,
Junction to Lead 6
R_θJL
Total Device Dissipation
(Single Pulse < 10 sec.)
P_D Single
Junction and Storage
Temperature Range
T_J, T_stg
1. FR–4, Minimum Pad, 1 oz Coverage
2. FR–4, 1″ Pad, 1 oz Coverage
Max
Unit
–12
Vdc
–12
Vdc
–5.0
Vdc
–2.0
Adc
–3.0
HBM Class 3
MM Class C
Max
Unit
450
mW
3.6
mW/°C
275
°C/W
650
mW
5.2
mW/°C
192
°C/W
105
°C/W
1.4
W
–55 to
°C
+150
http://onsemi.com
12 VOLTS
3.0 AMPS
PNP TRANSISTOR
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
4
5
6
3
12
CASE 419B
SOT–363/SC–88
STYLE 20
DEVICE MARKING
11^d
11 = Specific Device Code
d _{= Date Code}
ORDERING INFORMATION
Device
Package
Shipping
NSL12AWT1
SOT–416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 1
Publication Order Number:
NSL12AW/D