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NSL12AW Datasheet, PDF (2/4 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications
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NSL12AW
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–12
Collector–Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
V(BR)CBO
–12
Emitter–Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
V(BR)EBO
–5.0
Collector Cutoff Current
(VCB = –12 Vdc, IE = 0)
ICBO
–
Collector–Emitter Cutoff Current
(VCES = –12 Vdc, IE = 0)
ICES
–
Emitter Cutoff Current
(VCES = –5.0 Vdc, IE = 0)
IEBO
–
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = –0.5 A, VCE = –1.5 V)
(IC = –0.8 A, VCE = –1.5 V)
(IC = –1.0 A, VCE = –1.5 V)
Collector–Emitter Saturation Voltage (Note 3)
(IC = –0.5 A, IB = –10 mA)
(IC = –0.8 A, IB = –16 mA)
(IC = –1.0 A, IB = –20 mA)
Base–Emitter Saturation Voltage (Note 3)
(IC = –1.0 A, IB = –20 mA)
hFE
100
100
100
VCE(sat)
–
–
–
VBE(sat)
–
Base–Emitter Turn–on Voltage (Note 3)
(IC = –1.0 A, VCE = –1.5 V)
VBE(on)
–
Cutoff Frequency
(IC = –100 mA, VCE = –5.0 V, f = 100 MHz)
fT
–
Output Capacitance
(VCB = –1.5 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%
Cobo
–
Typical
Max
Unit
–15
–25
–7.0
–0.02
–0.03
–0.03
Vdc
–
Vdc
–
Vdc
–
mAdc
–0.1
mAdc
–0.1
mAdc
–0.1
180
165
160
–0.10
–0.14
–0.17
–0.84
–0.81
100
50
–
300
–
–0.160
–0.235
–0.290
–0.95
–0.95
–
65
V
V
V
MHz
pF
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