English
Language : 

N24C02 Datasheet, PDF (3/10 Pages) ON Semiconductor – 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM
N24C02, N24C04, N24C08, N24C16
Table 5. PIN IMPEDANCE CHARACTERISTICS
(VCC = 1.7 V / 1.6 V* to 5.5 V, TA = −40°C to +85°C and VCC = 1.8 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Max
Units
CIN (Note 4) SDA I/O Pin Capacitance
VIN = 0 V
8
pF
CIN (Note 4) Input Capacitance (other pins)
VIN = 0 V
6
pF
IWP, IA
(Note 5)
WP Input Current, Address Input
Current (A0, A1, A2)
VIN < VIH, VCC = 5.5 V
VIN < VIH, VCC = 3.3 V
50
mA
35
VIN < VIH, VCC = 1.7 V
25
VIN > VIH
2
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
5. When not driven, the WP, A0, A1 and A2 pins are pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively
strong; therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull−down reverts to a weak current source.
*VCC(min) = 1.6 V for Read operations, TA = −20°C to +85°C.
Table 6. A.C. CHARACTERISTICS
(VCC = 1.7 V / 1.6 V* to 5.5 V, TA = −40°C to +85°C and VCC = 1.8 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.) (Note 6)
Standard
Fast
Fast−Plus
Symbol
Parameter
Min
Max
Min
FSCL
Clock Frequency
100
tHD:STA
START Condition Hold Time
4
0.6
tLOW
Low Period of SCL Clock
4.7
1.3
tHIGH
High Period of SCL Clock
4
0.6
tSU:STA
START Condition Setup Time
4.7
0.6
tHD:DAT
Data In Hold Time
0
0
tSU:DAT
Data In Setup Time
250
100
tR (Note 7)
SDA and SCL Rise Time
1,000
tF (Note 7)
SDA and SCL Fall Time
300
tSU:STO
STOP Condition Setup Time
4
0.6
tBUF
Bus Free Time Between
4.7
1.3
STOP and START
Max
400
300
300
Min
0.26
0.50
0.26
0.26
0
50
0.26
0.5
Max
1,000
120
120
Units
kHz
ms
ms
ms
ms
ms
ns
ns
ns
ms
ms
tAA
SCL Low to Data Out Valid
3.5
0.9
0.45
ms
tDH (Note 7) Data Out Hold Time
100
100
50
ns
Ti (Note 7)
Noise Pulse Filtered at SCL
50
50
and SDA Inputs
50
ns
tSU:WP
WP Setup Time
0
0
0
tHD:WP
WP Hold Time
2.5
2.5
1
tWR
Write Cycle Time
4
4
tPU (Notes 7, 8) Power-up to Ready Mode
0.35
0.35
6. Test conditions according to “A.C. Test Conditions” table.
7. Tested initially and after a design or process change that affects this parameter.
8. tPU is the delay between the time VCC is stable and the device is ready to accept commands.
*VCC(min) = 1.6 V for Read operations, TA = −20°C to +85°C.
ms
ms
4
ms
0.35
ms
Table 7. A.C. TEST CONDITIONS
Input Levels
0.2 x VCC to 0.8 x VCC for VCC ≥ 2.2 V
0.15 x VCC to 0.85 x VCC for VCC < 2.2 V
Input Rise and Fall Times
≤ 50 ns
Input Reference Levels
Output Reference Levels
Output Load
0.3 x VCC, 0.7 x VCC
0.3 x VCC, 0.7 x VCC
Current Source: IOL = 6 mA (VCC ≥ 2.2 V); IOL = 2 mA (VCC < 2.2 V); CL = 100 pF
www.onsemi.com
3