MMDF2P03HDR2 Datasheet, PDF (3/10 Pages) ON Semiconductor – Power MOSFET 2 Amps, 30 Volts P−Channel SO−8, Dual

MMDF2P03HD
TYPICAL ELECTRICAL CHARACTERISTICS
4
V_GS = 10 V 4.5 V
3
3.7 V _{3.5 V} ^{TJ = 25°C}
3.9 V
3.3 V
2
3.1 V
2.9 V
1
2.7 V
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4
V_DS ≥ 10 V
3
2
T_J = 100°C
25°C
1
− 55°C
0
1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
I_D = 1 A
0.5
T_J = 25°C
0.4
0.3
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.30
T_J = 25°C
0.25
0.20
0.15
V_GS = 4.5 V
10 V
0.10
0 0.5 1 1.5 2 2.5 3 3.5 4
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
V_GS = 10 V
I_D = 2 A
1.4
1000
V_GS = 0 V
1.2
100
T_J = 125°C
1.0
100°C
0.8
0.6
−50 − 25 0 25 50 75 100 125 150
10
0
10
20
30
T_J, JUNCTION TEMPERATURE (°C)
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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