MMDF2P03HDR2 Datasheet, PDF (2/10 Pages) ON Semiconductor – Power MOSFET 2 Amps, 30 Volts P−Channel SO−8, Dual

MMDF2P03HD
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted) (Note 1.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 μAdc)
Temperature Coefficient (Positive)
V_(BR)DSS
30
−
Zero Gate Voltage Drain Current
(V_DS = 30 Vdc, V_GS = 0 Vdc)
(V_DS = 30 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 μAdc)
Temperature Coefficient (Negative)
I_DSS
−
−
I_GSS
−
V_GS(th)
1.0
−
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 2.0 Adc)
(V_GS = 4.5 Vdc, I_D = 1.0 Adc)
R_DS(on)
−
−
Forward Transconductance (V_DS = 3.0 Vdc, I_D = 1.0 Adc)
g_FS
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 24 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
C_iss
−
C_oss
−
C_rss
−
SWITCHING CHARACTERISTICS (Note 4.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 15 Vdc, I_D = 2.0 Adc,
V_GS = 4.5 Vdc,
R_G = 6.0 Ω)
t_d(on)
−
t_r
−
t_d(off)
−
t_f
−
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 15 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc,
R_G = 6.0 Ω)
t_d(on)
−
t_r
−
t_d(off)
−
t_f
−
Gate Charge
See Figure 8
(V_DS = 24 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc)
Q_T
−
Q₁
−
Q₂
−
Q₃
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 3.)
(I_S = 2.0 Adc, V_GS = 0 Vdc)
(I_S = 2.0 Adc, V_GS = 0 Vdc,
T_J = 125°C)
V_SD
−
−
Reverse Recovery Time
See Figure 15
(I_S = 2.0 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)
t_rr
−
t_a
−
t_b
−
Reverse Recovery Stored Charge
Q_RR
−
1. Negative sign for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
−
−
27
−
mV/°C
μAdc
−
1.0
−
10
−
100
nAdc
1.5
4.0
0.170
0.225
3.4
2.0
−
0.200
0.300
−
Vdc
mV/°C
Ohm
mhos
397
550
pF
189
250
64
126
16.25
33
ns
17.5
35
62.5
125
194
390
9.0
18
10
20
81
162
192
384
14.2
19
nC
1.1
−
4.5
−
3.5
−
1.82
2.0
Vdc
1.36
−
42.3
−
ns
15.6
−
26.7
−
0.044
−
μC
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