MMDF2P03HDR2 Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET 2 Amps, 30 Volts P−Channel SO−8, Dual

MMDF2P03HD
Preferred Device
Power MOSFET
2 Amps, 30 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T_A = 25°C
Drain Current − Continuous @ T_A = 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation @ T_C = 25°C (Note 2.)
Operating and Storage Temperature Range
V_DSS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
T_J, T_stg
30
30
± 20
3.0
1.9
15
2.0
− 55
to 150
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 30 Vdc, V_GS = 5.0 Vdc, Peak
I_L = 6.0 Apk, L = 18 mH, R_G = 25 Ω)
Thermal Resistance − Junction to Ambient
(Note 2.)
E_AS
324 mJ
R_θJA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T_L
260 °C
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)
with one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES
30 VOLTS
R_DS(on) = 200 mW
P−Channel
D
G
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
D2P03
LYWW
1
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2P03HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 8
Publication Order Number:
MMDF2P03HD/D