EFC4C002NL Datasheet, PDF (3/6 Pages) ON Semiconductor – Power MOSFET

EFC4C002NL
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
S2
G2
A
Test Circuit 2
IGSS
S2
G2
G1
VSS
S1
Test Circuit 3
VGS(th)
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
VGS
S1
A
VSS
Test Circuit 5
RSS(on)
S2
IS
G2
G1
VGS
V
S1
Test Circuit 7
Qg
S2
When FET1 is measured,
G2
Gate and Source of FET2
are short-circuited.
IG =1mA
G1
S1
PG
A
RL
VSS
G1
A
VGS
S1
Test Circuit 4
gFS
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
A
G1
VGS
S1
Test Circuit 6
td(on), tr, td(off), tf
VSS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S2
RL
G2
V
G1
S1
VSS
When FET1 is measured,
PG
Gate and Source of FET2
are short-circuited.
Test Circuit 8
VF(S-S)
S2
IS
G2
VGS=0V ^G1
V
S1
When FET1 is
measured,+10V is added to
VGS of FET2.
When FET2 is measured, the position of FET1 and FET2 is switched.
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