EFC4C002NL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

EFC4C002NL
Power MOSFET
for 3-Cells Lithium-ion Battery Protection
30V, 2.6mΩ, 30A, Dual N-Channel, WLCSP8
This N-Channel Power MOSFET is produced using ON Semiconductor’s
trench technology, which is specifically designed to minimize gate charge
and ultra low on resistance.
This device is suitable for applications of DRONE or NOTEBOOK PC.
Features
 Ultra Low On-Resistance
 Low Gate Charge
 Common-Drain type
 Pb-Free, Halogen Free and RoHS compliance
Applications
 3-Cells Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
VSSS
VGSS
30
V
20
V
Source Current (DC)
Source Current (Pulse)
PW10s, duty cycle1%
Total Dissipation (Note 2)
IS
30
A
ISP
120
A
PT
2.6 W
Junction Temperature
Tj
150 C
Storage Temperature
Tstg
55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Junction to Ambient (Note 2)
R_JA
48
Note 2 : Surface mounted on ceramic substrate(5000mm²  0.8mm).
Unit
C/W
www.onsemi.com
VSSS
30V
RSS(on) Max
2.6mΩ@ 10V
3.3mΩ@ 8V
5.1mΩ@ 4.5V
IS _Max
30A
ELECTRICAL CONNECTION
N-Channel
6, 8
7
4, 5
1. Source 1
2. Gate 1
3. Source 1
4. Drain
5. Drain
6. Source 2
7. Gate 2
1, 3
2 8. Source 2
PIN ASSIGNMENT
Pin1:S1
Pin3:S1
Pin2:G1
Pin4:D
Pin8:S2
Pin6:S2
Pin7:G2
BOTTOM VIEW
Pin5:D
MARKING DIAGRAM
4C2
AAYWWZ
4C2 = Specific Device Code
AA = Assembly Location
Y = Year
WW = Work Week
Z = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
April 2016 - Rev. 0
Publication Order Number :
EFC4C002NL/D