EFC4C002NL Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET

EFC4C002NL
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Source to Source On-State
Resistance
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
RSS(on)
IS=1mA, VGS=0V
VSS=24V, VGS=0V
VGS=20V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=10A
VGS=10V, IS=10A
VGS=8V, IS=10A
VGS=4.5V, IS=10A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
30
V
1 A
200 nA
1.3
2.2 V
16
S
1.5
2.0
2.6 m
1.6
2.1
3.3 m
2.2
2.9
5.1 m
Static Drain to Source On-State
Resistance
RDS(on)
VGS=10V, IS=1A
10
m
Gate Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
RG
td(on)
tr
td(off)
tf
VSS=15V, VGS=10V, IS=10A Test Circuit 6
3

40
ns
750
ns
280
ns
105
ns
Input Capacitance
Ciss
VSS=15V, VGS=0V, f=1MHz
6,200
pF
Total Gate Charge
Qg
VSS=15V, VGS=4.5V, IS=15A Test Circuit 7
45
nC
Forward Source to Source Voltage
VF(S-S)
IS=10A, VGS=0V
Test Circuit 8
0.75
1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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