74HC595DG Datasheet, PDF (3/13 Pages) ON Semiconductor – 8−Bit Serial−Input/Serial or Parallel.Output Shift Register with Latched 3−State Outputs

74HC595
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V_CC DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V_in DC Input Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
V_out DC Output Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
I_in
DC Input Current, per Pin
±20
mA
I_out DC Output Current, per Pin
±35
mA
I_CC DC Supply Current, V_CC and GND Pins
±75
mA
P_D Power Dissipation in Still Air,
SOIC Package†
500
mW
TSSOP Package†
450
T_stg Storage Temperature
– 65 to + 150
_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
T_L Lead Temperature, 1 mm from Case for 10 Seconds
_C
(SOIC or TSSOP Package)
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
V_CC DC Supply Voltage (Referenced to GND)
2.0
V_in, V_out DC Input Voltage, Output Voltage
0
(Referenced to GND)
T_A Operating Temperature, All Package Types
– 55
t_r, t_f Input Rise and Fall Time
(Figure 1)
V_CC = 2.0 V
0
V_CC = 4.5 V
0
V_CC = 6.0 V
0
Max
6.0
V_CC
Unit
V
V
+ 125 _C
1000 ns
500
400
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