CAV25640 Datasheet, PDF (2/14 Pages) ON Semiconductor – 64-Kb SPI Serial CMOS EEPROM

CAV25640
MARKING DIAGRAMS
25640F
AYMXXX
G
(SOIC−8)
25640F = Specific Device Code
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
G = Pb−Free Package
S6T
AXX
YM
G
(TDFN−8)
S6T = Specific Device Code
A = Assembly Location
XX = Last Two Digits of
XXX = Assembly Lot Number
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
G = Pb−Free Package
S64F
AYMXXX
G
(TSSOP−8)
S64F = Specific Device Code
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
G = Pb−Free Package
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Note 3) Endurance
1,000,000
Program / Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V_CC = 5 V, 25°C.
Table 3. D.C. OPERATING CHARACTERISTICS (V_CC = 2.5 V to 5.5 V, T_A = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
I_CCR
I_CCW
I_SB1
Supply Current (Read Mode)
Supply Current (Write Mode)
Standby Current
Read, V_CC = 5.5 V, 5 MHz, SO open
Write, V_CC = 5.5 V, 5 MHz, SO open
V_IN = GND or V_CC, CS = V_CC,
WP = V_CC, V_CC = 5.5 V
2
mA
3
mA
2
mA
I_SB2
Standby Current
V_IN = GND or V_CC, CS = V_CC,
WP = GND, V_CC = 5.5 V
5
mA
I_L
Input Leakage Current
I_LO
Output Leakage Current
V_IN = GND or V_CC
CS = V_CC,
V_OUT = GND or V_CC
−2
2
mA
−1
2
mA
V_IL
V_IH
V_OL1
Input Low Voltage
Input High Voltage
Output Low Voltage
I_OL = 3.0 mA
−0.5
0.3 V_CC
V
0.7 V_CC
V_CC + 0.5
V
0.4
V
V_OH1 Output High Voltage
I_OH = −1.6 mA
V_CC − 0.8 V
V
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