PSMN7R0-60YS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET

NXP Semiconductors
PSMN7R0-60YS
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
10
R_DSon
(mΩ)
9
8
7
6
5
4
0
V_GS(V) = 5
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5.5
6
6.5
8
10
20
40
60
80
100
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
4
2
0
0
48V
12V
20
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V_DS= 30V
40
60
Q_G (nC)
10⁴
C
(p F )
10³
10²
10^-1
1
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C_{is s}
C_{os s}
C_{rs s}
10
10²
V_DS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Drain-source on-state resistance as a function
of drain current; typical values
PSMN7R0-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
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