PSMN7R0-60YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET

NXP Semiconductors
PSMN7R0-60YS
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
100
g_fs
(S)
80
60
40
20
0
0
003aae058
20
40
60
80
I_D (A)
80
I_D
(A)
60
40
20
0
0
003aae057
T_j = 175°C
T_j = 25 °C
2
4
6
V_GS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
5000
C
(pF)
4000
3000
2000
003aae059
C_iss
C_rss
1000
0
0
2.5
5
7.5 _VGS(V) 10
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
20
R_DSon
(mΩ)
15
003aae062
10
5
0
0
5
10
15 _VGS(V) 20
Fig 7. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN7R0-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
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