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PSMN7R0-60YS Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
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NXP Semiconductors
PSMN7R0-60YS
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
VGS(pl)
gate-source plateau
voltage
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
Min
ID = 250 µA; VGS = 0 V; Tj = -55 °C
54
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 2
and 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 -
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 1
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
VDS = 60 V; VGS = 0 V; Tj = 125 °C
-
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
VGS = 10 V; ID = 15 A; Tj = 175 °C; see Figure 12 -
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 -
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 -
f = 1 MHz
-
ID = 60 A; VDS = 30 V; VGS = 10 V; see Figure 14 -
and 15
ID = 0 A; VDS = 0 V; VGS = 10 V
-
ID = 60 A; VDS = 30 V; VGS = 10 V; see Figure 14 -
-
-
ID = 60 A; VDS = 30 V; VGS = 10 V; see Figure 14 -
and 15
VDS = 30 V; see Figure 14 and 15
-
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
see Figure 16
-
-
VDS = 30 V; RL = 0.5 Ω; VGS = 10 V;
-
RG(ext) = 4.7 Ω
-
-
-
IS = 15 A; VGS = 0 V; Tj = 25 °C; see Figure 17 -
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
VDS = 30 V
-
Typ Max Unit
-
-
V
-
-
V
3
4
V
-
4.7 V
-
-
V
0.04 2
µA
-
100 µA
2
100 nA
2
100 nA
9.3 14.7 mΩ
-
10.2 mΩ
4.95 6.4 mΩ
0.65 1.5 Ω
45
-
nC
37.6 -
nC
14.8 -
nC
7.9 -
nC
6.8 -
nC
9.6 -
nC
4.9 -
V
2712 -
pF
366 -
pF
202 -
pF
19.9 -
ns
20.3 -
ns
37.9 -
ns
12.6 -
ns
0.8 1.2 V
41.9 -
ns
57.3 -
nC
PSMN7R0-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
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