PSMN7R0-60YS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET

NXP Semiconductors
PSMN7R0-60YS
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
100
I_D
(A)
80
10 6.5 6 5.5
60
40
20
0
0
0.5
1
003aae056
5
4.8
4.6
V_GS(V) = 4.5
1.5
2
V_DS(V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Output characteristics: drain current as a
Fig 10. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
5
V_GS(th)
(V)
4
3
2
1
003aad280
2.4
a
2
max
1.6
typ
1.2
min
0.8
0.4
003aad696
0
−60
0
60
120
180
T_j (°C)
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature.
PSMN7R0-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
8 of 15